| Title | Hydrogenated amorphous silicon p-i-n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing |
| Publication Type | Journal Article |
| Year of Publication | 2012 |
| Authors | Wank MA, van Swaaij R, van de Sanden R, Zeman M |
| Journal | Progress in Photovoltaics |
| Volume | 20 |
| Pagination | 333-342 |
| Date Published | May |
| Type of Article | Article |
| ISBN Number | 1062-7995 |
| Accession Number | WOS:000302946900010 |
| Keywords | A-SI-H, hydrogenated amorphous silicon, PLASMA, plasma deposition, pulse-shaped biasing, surface |
| Abstract | We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200 degrees C and growth rates of about 1?nm/s. Fourier transform infrared spectroscopy of intrinsic films showed a densification with increasing deposited energy and a reduction in void content, whereas dual-beam photoconductivity measurements showed an increase in Urbach energy above 4.8?eV/Si atom. From dark conductivity and photoconductivity measurements, we determined a maximum photoresponse of 2 x 106 at 3?eV/Si atom, which decreased at higher deposited energies because of a higher dark conductivity as a result of a lower band gap. pin solar cells with PSB applied during the intrinsic layer deposition showed initial energy conversion efficiencies of 7.4% at around 1?eV/Si atom. Decreasing open-circuit voltage at >1?eV/Si atom can be related to a lower band gap, whereas the short-circuit current drops at >4.8?eV/Si atom, predominantly because of hole collection losses as determined from quantum efficiency measurements. The reduced fill factor for >1?eV/Si atom was presumably related to a decrease in mobility-lifetime product because of an increase in defect density. Copyright (c) 2011 John Wiley & Sons, Ltd. |
| URL | http://gateway.isiknowledge.com/gateway/Gateway.cgi?&GWVersion=2&SrcAuth=Test&SrcApp=TestApp&DestLinkType=FullRecord&KeyUT=WOS:000302946900010&DestApp=WOS |
| Alternate Journal | Prog. Photovoltaics |
