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2002

Lewis RA, Bradley IV, Henini M. 2002. Photoconductivity of Be-doped GaAs under intense terahertz radiation. Solid State Communications. 122:223-228.

Forcales M, Bradley IV, Wells J-PR, Gregorkiewicz T. 2002. Temporal characteristics of the optical storage effect in Si:Er. Solid State Phenomena. 82-84:623-628.

Lewis RA, Xu W, Koenraad PM, Bradley IV. 2002. Effect of strong terahertz radiation on magnetoconductivity in two dimensions. International Journal of Modern Physics B. 16:2964-2967. Abstract

Murzyn P, Pidgeon CR, Wells JPR, Bradley IV, Ikonic Z, Kelsall RW, Harrison P, Lynch SA, Paul DJ, Arnone DD et al.. 2002. Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures. Applied Physics Letters. 80:1456-1458.

Tan HA, Xin ZJ, Rutt HN, Wells JPR, Bradley IV. 2002. Intersubband lifetimes and free carrier effects in optically pumped far infrared quantum wells laser structures. Semiconductor Science and Technology. 17:645-650.

Clarke DG, Pidgeon CR, Wells JPR, Bradley IV, Murray R, Murdin BN. 2002. Double resonance study of hole burning in self-assembled quantum dots. Physica B-Condensed Matter. 314:474-476. Abstract

Forcales M, Gregorkiewicz T, Bradley IV, Wells JPR. 2002. Afterglow effect in photoluminescence of Si : Er. Physical Review B. 65

Shastin VN, Zhukavin RK, Orlova EE, Pavlov SG, Rummeli MH, Hubers HW, Hovenier JN, Klaassen TO, Riemann H, Bradley IV et al.. 2002. Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation. Applied Physics Letters. 80:3512-3514.

Klik MAJ, Gregorkiewicz T, Bradley IV, Wells JPR. 2002. Optically induced deexcitation of rare-earth ions in a semiconductor matrix. Physical Review Letters. 89

2003

Forcales M, Gregorkiewicz T, Bresler MS, Gusev OB, Bradley IV, Wells JPR. 2003. Microscopic model for nonexcitonic mechanism of 1.5-mu m photoluminescence of the Er3+ ion in crystalline Si. Physical Review B. 67

Zheng WM, Halsall MP, Harrison P, Wells JPR, Bradley IV, Steer MJ. 2003. Picosecond time-resolved studies of excited state lifetime of Be acceptor in GaAs/AlAs multiple quantum wells. Physica Status Solidi B-Basic Research. 235:54-57.

Paul DJ, Lynch SA, Bates R, Ikonic Z, Kelsall RW, Harrison P, Norris DJ, Liew SL, Cullis AG, Arnone DD et al.. 2003. Si/SiGe quantum-cascade emitters for terahertz applications. Physica E-Low-Dimensional Systems & Nanostructures. 16:147-155.

Zheng WM, Halsall MP, Harrison P, Wells JPR, Bradley IV, Steer MJ. 2003. Effect of quantum-well confinement on acceptor state lifetime in delta-doped GaAs/AlAs multiple quantum wells. Applied Physics Letters. 83:3719-3721.

Child RA, Nicholas RJ, Mason NJ, Shields PA, Wells JPR, Bradley IV, Phillips J, Murdin BN. 2003. Far-infrared modulated photoluminescence spectroscopy of InSb/GaSb quantum dot structures. Physical Review B. 68

2004

Child RA, Nicholas RJ, Mason NJ, Shields P, Wells JPR, Bradley IV, Phillips J, Murdin BN. 2004. Far infrared modulated photoluminescence in InSb quantum dots. Physica E-Low-Dimensional Systems & Nanostructures. 22:598-602. Abstract