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Effect of quantum-well confinement on acceptor state lifetime in delta-doped GaAs/AlAs multiple quantum wells. Applied Physics Letters. 83:3719-3721.. 2003.
Picosecond time-resolved studies of excited state lifetime of Be acceptor in GaAs/AlAs multiple quantum wells. Physica Status Solidi B-Basic Research. 235:54-57.. 2003.
Normal incidence mid-infrared photocurrent in AlGaN/GaN quantum well infrared photodetectors. Acta Physica Polonica A. 107:174-178.. 2005.
Quantum-confined impurities as single-electron quantum dots: Application in Tereherz emitters. Ultrafast Phenomena in Semiconductors 2001. 384-3:165-172.. 2002.
Binding energy and dynamics of Be acceptor levels in AlAs/GaAs multiple quantum wells. Journal of Luminescence. 108:181-184.. 2004.
Hole confinement and dynamics in delta-doped Ge quantum dots. Journal of Luminescence. 108:329-332.. 2004.