@article{5606,
  author = {B. N. Murdin and G.M.H. Knippels and A. F. G. van der Meer and C. R. Pidgeon and Cjgm Langerak and M. Helm and W. Heiss and K. Unterrainer and E. Gornik and K. K. Geerinck and N. J. Hovenier and W. T. Wenckebach},
  title = {Excite-Probe Determination of the Intersubband Lifetime in Wide Gaas/Algaas Quantum-Wells Using a Far-Infrared Free-Electron Laser},
  abstract = {A direct excite-probe semiconductor lifetime determination in the picosecond regime has been made for the first time in the far infrared. We have used an RF-linac-pumped free-electron laser to determine the relaxation rate associated with intersubband absorption in GaAs/AlGaAs quantum wells having a subband separation smaller than the optical phonon energy. The measurement yields a relaxation lifetime of 40 +/- 5 ps. This is compared with a variety of other results obtained with less direct techniques.},
  year = {1994},
  journal = {Semiconductor Science and Technology},
  volume = {9},
  number = {8},
  pages = {1554-1557},
  month = {Aug},
  isbn = {0268-1242},
  doi = {10.1088/0268-1242/9/8/019},
  language = {eng},
}