@article{5717,
  author = {F. Bijkerk and L. A. Shmaenok and E. Louis and H. J. Voorma and N. B. Koster and C. Bruineman and Rkfj Bastiaensen and E. W. J. M. van der Drift and J. Romijn and L. E. M. de Groot and B. A. C. Rousseeuw and T. Zijlstra and Y . Y. Platonov and N. N. Salashchenko},
  title = {Extreme UV lithography: A new laser plasma target concept and fabrication of multilayer reflection masks},
  abstract = {Results are reported on the development of a laser plasma source and the fabrication of multilayer reflection masks for extreme ultra-violet lithography (EUVL). A new concept of a target for a laser plasma source is presented including experimental evidence of elimination of macro debris particles from the source. Concerning the fabrication of reflection masks, a new method is described involving a two-layer absorber system protecting the Mo-Si structure against etching damage.},
  year = {1996},
  journal = {Microelectronic Engineering},
  volume = {30},
  number = {1-4},
  pages = {183-186},
  month = {Jan},
  isbn = {0167-9317},
  doi = {10.1016/0167-9317(95)00222-7},
  language = {eng},
}