@article{5742,
  author = {P. C. M. Planken and H. P. M. Pellemans and P. C. van Son and J. N. Hovenier and T. O. Klaassen and W. T. Wenckebach and P. W. Barmby and J. L. Dunn and C. A. Bates and C. T. Foxon and Cjgm Langerak},
  title = {Using far-infrared two-photon excitation to measure the resonant-polaron effect in the Reststrahlen band of GaAs:Si},
  abstract = {We demonstrate that we can use far-infrared two-photon excitation with picosecond pulses to measure the resonant polaron effect of the 1s-3d(+2) silicon impurity transition in the middle of the Reststrahlen band of GaAs:Si. Contrary to single-photon measurements, our two-photon measurements do not suffer from the problems of strong reflection and small penetration depth of light in the Reststrahlen band of the GaAs host lattice. As a result, we are able to measure a significant fraction of the magnetic field dependent anticrossing of the 1s-3d(+2) transition with the LO-phonon.},
  year = {1996},
  journal = {Optics Communications},
  volume = {124},
  number = {3-4},
  pages = {258-262},
  month = {Mar 1},
  isbn = {0030-4018},
  doi = {10.1016/0030-4018(95)00676-1},
  language = {eng},
}