@article{6101,
  author = {M. Forcales and I. V. Bradley and J. P. R. Wells and T. Gregorkiewicz},
  title = {Mid-infrared induced quenching of photoluminescence in Si : Er},
  abstract = {The recently reported effect of luminescence quenching by a mid-infrared (MIR) pulse from a free-electron laser was investigated in various Si:Er materials. No quenching was observed in Si:Er samples whose photoluminescence spectra were dominated by the so-called 'cubic' centers. Furthermore, in addition to the low-symmetry Er-related spectra, the MIR-induced quenching was found to take place also for a broad emission band centered around 1.4 mum, and usually assigned to implantation damage. The band-edge excitonic emission remained unaffected by the MIR radiation. (C) 2001 Elsevier Science B.V. All rights reserved.},
  year = {2001},
  journal = {Materials Science and Engineering B-Solid State Materials for Advanced Technology},
  volume = {81},
  number = {1-3},
  pages = {80-82},
  month = {Apr 24},
  isbn = {0921-5107},
  doi = {10.1016/s0921-5107(00)00741-8},
  language = {eng},
}