@article{6479,
  author = {B. Mertens and M. Weiss and H. Meiling and R. Klein and E. Louis and R. Kurt and M. Wedowski and H. Trenkler and B. Wolschrijn and R. Jansen and A. van de Runstraat and R. Moors and K. Spee and S. Ploger and R. van de Kruijs},
  title = {Progress in EUV optics lifetime expectations},
  abstract = {Optics lifetime and contamination is one of the major challenges for extreme ultraviolet (EUV) lithography. The basic contamination and lifetime limiting processes are carbon growth and oxidation of the mirrors. Without appropriate measures, optics lifetime will be limited to a few hours. Within the EUV alpha-tool project of ASML and Carl Zeiss, several potential solutions. towards improvement of optics life time are being studied: vacuum improvement, capping layers for oxidation protection, mitigation of carbon growth and development of efficient cleaning techniques that are soft to the mirror. For instance, we have been able to identify a capping layer that shows carbon growth even under extremely oxidizing conditions.. The current status of our experiments leads us to believe that A lifetime of 1000 h is within reach. (C) 2004 Elsevier B.V. All rights reserved.},
  year = {2004},
  journal = {Microelectronic Engineering},
  volume = {73-74},
  pages = {16-22},
  month = {Jun},
  isbn = {0167-9317},
  url = {<Go to ISI>://000222145400005 },
  note = {ISI Document Delivery No.: 830TFSp. Iss. SI},
  language = {English},
}