@article{6890, author = {I. Izeddin and M. A. J. Klik and N. Q. Vinh and M. S. Bresler and T. Gregorkiewicz}, title = {Mid-infrared spectroscopy of the Er-related donor state in Si/Si : Er3+ nanolayers}, abstract = {We present experimental evidence on the donor level related to optical properties of the Er3+ ion in crystalline silicon. Using two-color spectroscopy with a free-electron laser we provide a direct link between the identified level in the bandgap and the optical properties of EP,. The investigation is performed in sublimation MBE-grown Si/Si:Er multinanolayer structure, which allows us to take advantage of the preferential formation of a single Er-related center. Quenching of the Er-related 1.5 mu m photoluminescence, due to ionization of the donor state with energy E-D approximate to 225 meV, is demonstrated. A microscopic model of the PL quenching mechanism as Auger type energy transfer between excited Er3+ ions and free carriers optically ionized from the Er-related donor states is put forward. (c) 2007 Elsevier B.V. All rights reserved.}, year = {2008}, journal = {Materials Science and Engineering B-Solid State Materials for Advanced Technology}, volume = {146}, number = {1-3}, pages = {131-134}, month = {Jan}, isbn = {0921-5107}, url = {://000252668300027 }, note = {ISI Document Delivery No.: 255OWTimes Cited: 0Cited Reference Count: 16}, language = {English}, }