@article{6972,
  author = {S. G. Pavlov and H. W. Hubers and P. M. Haas and J. N. Hovenier and T. O. Klaassen and R. K. Zhukavin and V. N. Shastin and D. A. Carder and B. Redlich},
  title = {Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon},
  abstract = {Noncascade relaxation of photoexcited electrons on ionized donor centers has been observed in silicon doped by arsenic (Si:As) at low temperatures. Emission spectra of the Si:As terahertz intracenter laser give evidence of specific channels for the electron relaxation through low-lying donor states. The dominating relaxation channels strongly depend on the initial energy distribution of the nonequilibrium carriers. A relaxation step may exceed not only the energy gap to an adjacent lower-lying donor level but also the characteristic energy step as set by the energy and momentum conservation requirements for intravalley acoustic phonons.},
  year = {2008},
  journal = {Physical Review B},
  volume = {78},
  number = {16},
  pages = {7},
  month = {Oct},
  isbn = {1098-0121},
  url = {<Go to ISI>://000260574500052 },
  note = {ISI Document Delivery No.: 367TCTimes Cited: 0Cited Reference Count: 29},
  language = {English},
}