@proceedings{7042,
  author = {A. D. Verkerk and M. M. de Jong and J.K. Rath and M. Brinza and R. E. I. Schropp and W. J. Goedheer and V. V. Krzhizhanovskaya and Y. E. Gorbachev and K. E. Orlov and E. M. Khilkevitch and A. S. Smirnov},
  title = {Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures},
  abstract = {In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by low process temperature. Using an electrostatic ion energy analyzer the effect of deposition temperature on the energies of ions reaching the substrate was measured. The ion energy decreases with decreasing temperature. but this can be compensated by diluting the silane source gas by hydrogen. (C) 2008 Elsevier B.V. All rights reserved.},
  year = {2009},
  pages = {53-56},
  publisher = {Elsevier Science Bv},
  url = {<Go to ISI>://000267635500014 },
  note = {ISI Document Delivery No.: 466BMTimes Cited: 0Cited Reference Count: 13},
  language = {English},
}