@proceedings{7046,
  author = {X. Lu and Y. Qin and J. Ning and T. Zhou and C . Y. Deng and C. Meng and Q. Qian and Z. Chuanwu and Y. Ying and J. Ming and F. Gou},
  title = {Molecular dynamics simulations of CH+ ions interaction with silicon carbide},
  abstract = {In this study, we have simulated the CH+ ions bombardment on a Si-terminated 3C-SiC (0 0 1) surface using molecular dynamic simulations with a Tersoff-Brenner potentials. The results show that the sputtering yields of Si atoms is more than that of C atoms. With increasing incident energy the uptake of H atoms increases, while the uptake of C atoms decreases. In amorphous layer, a carbon-rich region is observed. In the films, the CH group and SiH group are dominant. Their fractions increase with increasing incident energy, and then decrease. (C) 2009 Elsevier B.V. All rights reserved.},
  year = {2009},
  pages = {3242-3244},
  publisher = {Elsevier Science Bv},
  url = {<Go to ISI>://000271349500069 },
  note = {ISI Document Delivery No.: 513UNTimes Cited: 0Cited Reference Count: 13},
  language = {English},
}