@article{bibcite_7057,
  author = {K. K. Kohli and N. Q. Vinh and P. Clauws and G. Davies},
  title = {Strange lifetimes of the vibrations of interstitial oxygen in SiGe alloys},
  abstract = {New principles to generate stimulated emission in terahertz frequency range from silicon doped by shallow donor centers have been demonstrated. Lasing in the frequency bands covering the range of 4.5{\textendash}6.4 THz has been achieved from silicon crystals doped by all group-V donors under optical pumping by radiation of frequency-tunable mid-infrared free electron laser at cryogenic temperatures. Analysis of the data shows that the emission corresponds to Stokes-shifted Raman-type lasing. The Stokes shift is determined by the 1s(E){\textendash}1s(A1) donor electronic resonance.
},
  year = {2009},
  journal = {Physica B: Condensed Matter},
  volume = {404},
  number = {23-24},
  pages = {4689-4692},
  language = {eng},
}