@proceedings{7067,
  author = {J.K. Rath and A. D. Verkerk and Y. Liu and M. Brinza and W. J. Goedheer and R. E. I. Schropp},
  title = {Gas phase considerations for the growth of device quality nanocrystalline silicon at high rate},
  abstract = {In order to increase industrial viability and to find niche markets, high deposition rate and low temperature depositions compared to standard deposition conditions are two recent trends in research areas concerning thin film silicon. In situ diagnostic tools to monitor gas phase conditions are useful in quick optimization processes of deposition parameters without going into time consuming material characterizations. Optical emission spectroscopy is an efficient technique to monitor/predict growth rate and phase of the material (amorphous or nanocrystalline). However, at high growth rate conditions which are generally achieved at high chamber pressures (p), the simple correlation breaks down. We see that at high pressure condition a higher H-alpha/Si-center dot is needed for the onset of crystallinity than that is found at lower pressure conditions. Additional methods such as estimating the silane depletion from the experiment and the flux ratio of atomic hydrogen to deposited silicon atoms from simulations can be used for fine-tuning the amorphous to nanocrystalline transition regime. On the other hand, intensity of Si-center dot line loses its character as a monitoring tool for deposition rate. Moreover, the plasma changes its character when the pressure is varied, even when the pd product is kept constant. In situ diagnosis of the ion energy distribution function by a retarding field ion energy analyzer has thrown new lights on the role of hydrogen dilution for depositions at low substrate temperature conditions, namely to compensate the loss in ion energy due to lower gas temperature. (C) 2008 Elsevier B.V. All rights reserved.},
  year = {2009},
  pages = {38-43},
  publisher = {Elsevier Science Bv},
  url = {<Go to ISI>://000267635500011 },
  note = {ISI Document Delivery No.: 466BMTimes Cited: 1Cited Reference Count: 24},
  language = {English},
}