@proceedings{7075,
  author = {X. Lu and J. Ning and Y. Qin and Q. Qian and Z. Chuanwu and Y. Ying and J. Ming and F. Gou},
  title = {Substrate temperature effect on F+ etching of SiC: Molecular dynamics simulation},
  abstract = {In this study, we performed molecular dynamics simulations to investigate F+ continuously bombarding SiC surfaces at temperatures of 100, 400, 600 and 800 K with the energy of 150 eV. The simulation results show that the etch rate of Si atoms is more than that of C atoms. With increasing temperature, the deposition yield of F atoms decreases, while the etch yields of C and Si atoms increase. In etching products, SiF, SiF2 and CF species are dominant. Their yields increase with increasing temperature. (C) 2009 Elsevier B.V. All rights reserved.},
  year = {2009},
  pages = {3235-3237},
  publisher = {Elsevier Science Bv},
  url = {<Go to ISI>://000271349500067 },
  note = {ISI Document Delivery No.: 513UNTimes Cited: 0Cited Reference Count: 10},
  language = {English},
}