@article{7111,
  author = {T. Tsarfati and E. Zoethout and R. van de Kruijs and F. Bijkerk},
  title = {In-depth agglomeration of d-metals at Si-on-Mo interfaces},
  abstract = {Reflective Si/Mo multilayer mirrors with protective d-metal surfaces onto a range of upper Mo and Si layer thicknesses have been grown with physical vapor deposition and investigated on diffusion and in-depth compound formation. Laterally inhomogeneous upward Si and downward d-metal diffusion occurs through Mo layers up to 2 nm thickness. Especially Ru and Rh agglomerate and form silicides such as Ru2Si3 and Rh2Si not in the midst of the Si layer but at the Si/Mo interface. This appears to be mediated by MoSi2 presence at the Si/Mo interface that acts as precursor via better lattice compatibility and lowering of formation energy.},
  year = {2009},
  journal = {Journal of Applied Physics},
  volume = {105},
  number = {6},
  pages = {5},
  month = {Mar},
  isbn = {0021-8979},
  url = {<Go to ISI>://000264774000156 },
  note = {ISI Document Delivery No.: 427IWTimes Cited: 0Cited Reference Count: 27},
  language = {English},
}