@article{7232,
  author = {B. Wittmann and S. N. Danilov and V. V. Bel'kov and S. A. Tarasenko and E. G. Novik and H. Buhmann and C. Brune and L. W. Molenkamp and Z. D. Kvon and N. N. Mikhailov and S. A. Dvoretsky and N. Q. Vinh and A. F. G. van der Meer and B. Murdin and S. D. Ganichev},
  title = {Circular photogalvanic effect in HgTe/CdHgTe quantum well structures},
  abstract = {We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model.},
  year = {2010},
  journal = {Semiconductor Science and Technology},
  volume = {25},
  number = {9},
  pages = {7},
  month = {Sep},
  isbn = {0268-1242},
  url = {<Go to ISI>://000281221200006 },
  note = {ISI Document Delivery No.: 642NHTimes Cited: 0Cited Reference Count: 25},
  language = {English},
}