@article{7275,
  author = {S. Dobrovolskiy and A. E. Yakshin and F. D. Tichelaar and J. Verhoeven and E. Louis and F. Bijkerk},
  title = {Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing},
  abstract = {Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 key CHx+ ions. Only about 3% of the implanted carbon was transferred into the SIC, with a thin, 0.5-1 nm, buried SIC layer being formed. We investigated the effect of thermal annealing on further completion of the carbide layer. For the annealing we used a vacuum furnace, a rapid thermal annealing system in argon atmosphere, and a scanning e-beam, for different temperatures, heating rates, and annealing durations. Annealing to a temperature as low as 600 degrees C resulted in the formation of a 4.5 nm smooth, amorphous carbide layer in the carbon-implanted region. However, annealing at a higher temperature, 1000 degrees C, lead to the formation of a rough poly-crystalline carbide layer. The multilayers were characterized by grazing incidence X-ray reflectometry and cross section TEM. (C) 2010 Elsevier BM. All rights reserved.},
  year = {2010},
  journal = {Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms},
  volume = {268},
  number = {6},
  pages = {560-567},
  month = {Mar},
  isbn = {0168-583X},
  url = {<Go to ISI>://000276053700004 },
  note = {ISI Document Delivery No.: 575GATimes Cited: 0Cited Reference Count: 24},
  language = {English},
}