@article{7320,
  author = {R. Sobierajski and S. Bruijn and A. R. Khorsand and E. Louis and Rwev de Kruijs and T. Burian and J. Chalupsky and J. Cihelka and A. Gleeson and J. Grzonka and E. M. Gullikson and V. Hajkova and S. Hau-Riege and L. Juha and M. Jurek and D. Klinger and J. Krzywinski and R. London and J. B. Pelka and T. Plocinski and M. Rasinski and K. Tiedtke and S. Toleikis and L. Vysin and H. Wabnitz and F. Bijkerk},
  title = {Damage mechanisms of MoN/SiN multilayer optics for next-generation pulsed XUV light sources},
  abstract = {We investigated the damage mechanism of MoN/SiN multilayer XUV optics under two extreme conditions: thermal annealing and irradiation with single shot intense XUV pulses from the free-electron laser facility in Hamburg - FLASH. The damage was studied "post-mortem" by means of X-ray diffraction, interference-polarizing optical microscopy, atomic force microscopy, and scanning transmission electron microscopy. Although the timescale of the damage processes and the damage threshold temperatures were different (in the case of annealing it was the dissociation temperature of Mo2N and in the case of XUV irradiation it was the melting temperature of MoN) the main damage mechanism is very similar: molecular dissociation and the formation of N-2, leading to bubbles inside the multilayer structure. (C) 2010 Optical Society of America
},
  year = {2011},
  journal = {Optics Express},
  volume = {19},
  number = {1},
  pages = {193-205},
  month = {Jan},
  isbn = {1094-4087},
  doi = {10.1364/OE.19.000193},
  note = {ISI Document Delivery No.: 702SJTimes Cited: 0Cited Reference Count: 34},
  language = {English},
}