@article{7321,
  author = {G. Dingemans and M. C. M. van de Sanden and W. M. M. Kessels},
  title = {Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film},
  abstract = {It is demonstrated that the application of an ultrathin aluminum oxide (Al2O3) capping film can improve the level of silicon surface passivation obtained by low-temperature synthesized SiO2 profoundly. For such stacks, a very high level of surface passivation was achieved after annealing, with S-eff < 2 cm/s for 3.5 Omega cm n-type c-Si. This can be attributed primarily to a low interface defect density (D-it < 10(11) eV(-1) cm(-2)). Consequently, the Al2O3 capping layer induced a high level of chemical passivation at the Si/SiO2 interface. Moreover, the stacks showed an exceptional stability during high-temperature firing processes and therefore provide a low temperature (},
  year = {2011},
  journal = {Physica Status Solidi-Rapid Research Letters},
  volume = {5},
  pages = {22-24},
  month = {Jan},
  isbn = {1862-6254},
  doi = {10.1002/pssr.201004378},
  language = {English},
}