@article{7347,
  author = {G. Dingemans and N. M. Terlinden and D. Pierreux and H. B. Profijt and M. C. M. van de Sanden and W. M. M. Kessels},
  title = {Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3},
  abstract = {Differences in Si surface passivation by aluminum oxide (Al2O3) films synthesized using H2O and O-3-based thermal atomic layer deposition (ALD) and plasma ALD have been revealed. A low interface defect density of D-it = similar to 1011 eV(-1) cm(-2) was obtained after annealing, independent of the oxidant. This low D-it was found to be vital for the passivation performance. Field-effect passivation was less prominent for H2O-based ALD Al2O3 before and after annealing, whereas for as-deposited ALD films with an O-2 plasma or O-3 as the oxidants, the field-effect passivation was impaired by a very high Dit. (C) 2010 The Electrochemical Society.},
  year = {2011},
  journal = {Electrochemical and Solid State Letters},
  volume = {14},
  pages = {H1-H4},
  isbn = {1099-0062},
  doi = {10.1149/1.3501970},
  language = {English},
}