@article{7420,
  author = {P. N. He and X. D. Lu and C. L. Zhao and J. P. Ning and Y. M. Qing and F. J. Gou},
  title = {Molecular dynamics simulations of energy effects on atorn F interaction with SiC(100)},
  abstract = {In this study, molecular dynamics simulations are used to investigate atom F interacting with SiC at 300 K. Simulation results show that with the saturation of the deposition of F atoms on the surface, the compositions (SiF(x) and CF(x) groups (x < 4)) in the reaction layer reach a steady state. When incident energy is less than 6 eV, no etching is observed. With incident energy increasing, the etching yields of Si and C atoms increase. It is found that Si atoms are preferentially removed. For etching products, SiF(4) is dominant. And the main etching mechanism of Si atoms is chemical etching.
},
  year = {2011},
  journal = {Acta Physica Sinica},
  volume = {60},
  pages = {095203},
  month = {Sep},
  isbn = {1000-3290},
  doi = {10.7498/aps.60.095203},
  note = {ISI Document Delivery No.: 823HVTimes Cited: 0Cited Reference Count: 21},
  language = {Unspecified},
}