@article{7466,
  author = {A. Illiberi and P. Kudlacek and A. H. M. Smets and M. Creatore and M. C. M. van de Sanden},
  title = {Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces},
  abstract = {We have found that controlled Ar ion bombardment enhances the degradation of a-Si: H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7-70 eV), but linearly proportional to the ion flux (6 X 10(14)-6 X 10(15) ions cm(-2) s(-1)). This result suggests that the ion flux determines the generation rate of electron-hole pairs in a-Si: H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron-hole pairs are discussed. (C) 2011 American Institute of Physics.},
  year = {2011},
  journal = {Applied Physics Letters},
  volume = {98},
  pages = {3},
  month = {Jun},
  isbn = {0003-6951},
  doi = {10.1063/1.3601485},
  language = {English},
}