@article{7488,
  author = {N. Leick and R. O. F. Verkuijlen and L. Lamagna and E. Langereis and S. Rushworth and F. Roozeboom and M. C. M. van de Sanden and W. M. M. Kessels},
  title = {Atomic layer deposition of Ru from CpRu(CO)(2)Et using O-2 gas and O-2 plasma},
  abstract = {The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)(2)Et) was used to develop an atomic layer deposition (ALD) process for ruthenium. O-2 gas and O-2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of similar to 1 angstrom was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of similar to 16 mu Omega cm. The O-2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD. (C) 2011 American Vacuum Society.},
  year = {2011},
  journal = {Journal of Vacuum Science & Technology A},
  volume = {29},
  pages = {021016},
  month = {Mar-Apr},
  isbn = {0734-2101},
  doi = {10.1116/1.3554691},
  language = {English},
}