@article{7498,
  author = {G. Dingemans and N. M. Terlinden and M. A. Verheijen and M. C. M. van de Sanden and W. M. M. Kessels},
  title = {Controlling the fixed charge and passivation properties of Si(100)/Al(2)O(3) interfaces using ultrathin SiO(2) interlayers synthesized by atomic layer deposition},
  abstract = {Al(2)O(3) synthesized by atomic layer deposition (ALD) on H-terminated Si(100) exhibits a very thin (similar to 1 nm) interfacial SiO(x) layer. At this interface, a high fixed negative charge density, Q(f), is present after annealing which contributes to ultralow surface recombination velocities similar to 5 nm), the polarity of the effective charge density changed from negative to positive. The observed changes in Q(f) and the associated field-effect passivation had a significant influence on the injection-level-dependent minority carrier lifetime of Si. (C) 2011 American Institute of Physics.},
  year = {2011},
  journal = {Journal of Applied Physics},
  volume = {110},
  pages = {6},
  month = {Nov},
  isbn = {0021-8979},
  doi = {10.1063/1.3658246},
  language = {English},
}