@article{7608,
  author = {C. L. Zhao and C . Y. Deng and W. Z. Sun and J. Y. Zhang and F. Chen and P. N. He and X. Chen and F. J. Gou},
  title = {Etching Mechanisms of CF3 Etching Fluorinated Si: Molecular Dynamics Simulation},
  abstract = {Molecular dynamics simulations are performed to investigate CF3 continuously bombarding the amorphous silicon surface with energies of 10 eV, 50 eV, 100 eV and 150 eV at normal incidence and room temperature. The improved Tersoff-Brenner potentials were used. The simulation results show that the steady-state etching rates are about 0.019, 0.085 and 0.1701 for 50 eV, 100 eV and 150 eV, respectively. With increasing incident energy, a transition from C-rich surface to F-rich surface is observed. In the region modified by CF3, SiF and CF species are dominant.},
  year = {2012},
  journal = {Plasma Science & Technology},
  volume = {14},
  pages = {670-674},
  month = {Jul},
  isbn = {1009-0630},
  url = {http://iopscience.iop.org/1009-0630/14/7/23/},
  doi = {10.1088/1009-0630/14/7/23},
  language = {English},
}