@article{7638,
  author = {K. Sharma and M. V. Ponomarev and M. A. Verheijen and O. Kunz and F. D. Tichelaar and M. C. M. van de Sanden and M. Creatore},
  title = {Solid-phase crystallization of ultra high growth rate amorphous silicon films},
  abstract = {In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11-60 nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (similar to 1.5 mu m) polycrystalline silicon was obtained after SPC of high growth rate (similar to 25 nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4717951]},
  year = {2012},
  journal = {Journal of Applied Physics},
  volume = {111},
  pages = {5},
  month = {May},
  isbn = {0021-8979},
  doi = {10.1063/1.4717951},
  language = {English},
}