@article{7649, author = {K. Sharma and M. A. Verheijen and M. C. M. van de Sanden and M. Creatore}, title = {In situ crystallization kinetics studies of plasma-deposited, hydrogenated amorphous silicon layers}, abstract = {The impact of the amorphous silicon properties, i.e., the microstructure parameter R* and the medium range order (MRO), on the crystallization process is highlighted and discussed. In agreement with literature, the development of large grains extending through the thickness of the poly-Si layer is found to be promoted by an increase in the amorphous silicon microstructure parameter, R*. Furthermore, while the role of the MRO in controlling the incubation time and, therefore, the onset in crystallization is generally acknowledged, it is also concluded that the presence of nano-sized voids plays an essential role in the crstallization kinetics. (C) 2012 American Institute of Physics. [doi:10.1063/1.3681185]}, year = {2012}, journal = {Journal of Applied Physics}, volume = {111}, pages = {6}, month = {Feb}, isbn = {0021-8979}, doi = {10.1063/1.3681185}, language = {English}, }