@article{7680,
  author = {C. Zhao and X. Lu and P. He and P. Zhang and W. Sun and J. Zhang and F. Chen and F. Gou},
  title = {CF3+ etching silicon surface: A molecular dynamics study},
  abstract = {In this study, a molecular dynamics simulation method has been employed to investigate CF3+ ions bombarding Si surface with the energy of 100, 200, 300 and 400 eV and an incident angle of 45 degrees with respect to the normal. The simulation results show that when CF3+ ions approach the Si surface they are broken up into small fragments. Some fragments deposit on the surface to form a "fluorocarbosilyl" layer. The erosion of Si is dominated by formation of SiF3 followed by SiF2 species and in minority species SiF. (C) 2011 Elsevier Ltd. All rights reserved.},
  year = {2012},
  journal = {Vacuum},
  volume = {86},
  pages = {913-916},
  month = {Feb},
  isbn = {0042-207X},
  doi = {10.1016/j.vacuum.2011.06.003},
  note = {ISI Document Delivery No.: 910KOTimes Cited: 0Cited Reference Count: 2118th International Vacuum Congress (IVC)/International Conference on Nanoscience and Technology (ICNT)/14th International Conference on Surfaces Science (ICSS)/Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA)AUG 23-27, 2010Beijing, PEOPLES R CHINAInt Union Vacuum Sci, Tech & Applicat (IUVSTA), Chinese Vacuum Soc (CVS)SI},
  language = {English},
}