@article{7719,
  author = {K. Sharma and M. V. Ponomarev and M. C. M. van de Sanden and M. Creatore},
  title = {On the effect of the underlying ZnO:Al layer on the crystallization kinetics of hydrogenated amorphous silicon},
  abstract = {In this contribution, we analyze the thickness effect of the underlying aluminum doped-zinc oxide (ZnO:Al) layers on the structural properties and crystallization kinetics of hydrogenated amorphous silicon (a-Si:H) thin films. It is shown that the disorder in as-deposited a-Si:H films, as probed by Raman spectroscopy, decreased with increasing ZnO:Al roughness. This caused an earlier nucleation upon crystallization when compared to a-Si:H layers directly grown on SiNx-coated glass.},
  year = {2013},
  journal = {Applied Physics Letters},
  volume = {102},
  number = {21},
  pages = {212107},
  publisher = {AIP},
  url = {http://link.aip.org/link/?APL/102/212107/1},
  doi = {10.1063/1.4809517},
  language = {eng},
}