@article{7760,
  author = {J. Bosgra and L. W. Veldhuizen and E. Zoethout and J. Verhoeven and R. A. Loch and A. E. Yakshin and F. Bijkerk},
  title = {Interactions of C in layered Mo-Si structures},
  abstract = {Interdiffusion of a few nanometers thick C layer with Mo and Si under annealing at a temperature of 600 C was studied using X-ray photoelectron spectroscopy sputter depth profiling. A strong diffusion asymmetry of C in a Mo-Si layered structure is observed. C does interdiffuse with Mo, however, even at 600 C, no interdiffusion of Si and C was observed. Based on these results, the thermal stability of Mo/Si-based layer structures was improved by depositing a Si/C/Mo2C/C/Si layer structure. This structure shows superior thermal stability at 600 C compared to the Mo2C/Si and Mo/Si layer structure. © 2013 Elsevier B.V. All rights reserved.},
  year = {2013},
  journal = {Thin Solid Films},
  volume = {542},
  pages = {210-213},
  doi = {10.1016/j.tsf.2013.06.082},
  note = {cited By (since 1996)0},
  language = {eng},
}