@article{8094,
  author = {K. Landheer and W. J. Goedheer and I. Poulios and R. E. I. Schropp and J. K. Rath},
  title = {Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH4-H2 discharge in the a-Si:H to μc-Si:H transition regime},
  abstract = {We studied ion bombardment during amorphous silicon layer deposition for hydrogen dilutions 5 to 59 with mass resolved IED measurements and simulations. The trends in the peak position of H2+ and SiHy+ IEDs with increasing hydrogen dilution show good agreement between measurements and simulations. A difference in asymmetry of the discharge between simulations and measurements results in a roughly 6 eV lower peak position for the simulations. An increasing SiHy+ ion flux with increasing hydrogen dilution is measured. We hypothesize that this is due to amorphous silicon etching that is enhanced by Hy+ ion bombardment.},
  year = {2016},
  journal = {Physica Status Solidi A - Applications and Materials Science},
  volume = {213},
  pages = {1680–1685},
  doi = {10.1002/pssa.201532917},
  language = {eng},
}