Publications
Afterglow effect in photoluminescence of Si : Er, Physical Review B 1965 (2002)
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Coherent dynamics of the localized vibrational modes of hydrogen in CaF2, Physical Review Letters 2184 (2000) 4998-5001.
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Direct determination of Shockley-Read-Hall trap density in InSb/InAlSb detectors, Journal of Physics-Condensed Matter 5012 (2000) L731-L734.
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Double resonance study of hole burning in self-assembled quantum dots, Physica B 1-4314 (2002) 474-476.
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Double-resonance spectroscopy of InAs/GaAs self-assembled quantum dots, Physical Review B 1262 (2000) R7755-R7758.
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Effect of quantum-well confinement on acceptor state lifetime in delta-doped GaAs/AlAs multiple quantum wells, Applied Physics Letters 1883 (2003) 3719-3721.
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Effect of strong terahertz radiation on magnetoconductivity in two dimensions, Int. J. Mod. Phys. B 20-2216 (2002) 2964-2967.
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Far-infrared modulated photoluminescence spectroscopy of InSb/GaSb quantum dot structures, Physical Review B 1668 (2003)
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Free-electron laser studies of energy transfer mechanisms in semiconductors doped with transition series ions, Journal of Luminescence 94 (2001) 243-248.
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Free-electron-laser studies of the relaxation of H- and D- local modes in CaF2, SrF2, and BaF2, Physical Review B 1464 (2001)
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Infrared absorption of H- and D- in the alkaline-earth fluorides, Journal of Physics-Condensed Matter 1013 (2001) 2127-2135.
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Intersubband lifetimes and free carrier effects in optically pumped far infrared quantum wells laser structures, Semiconductor Science and Technology 717 (2002) 645-650.
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Microscopic model for nonexcitonic mechanism of 1.5-mu m photoluminescence of the Er3+ ion in crystalline Si, Physical Review B 867 (2003)
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Mid-infrared induced quenching of photoluminescence in Si : Er, Materials Science and Engineering B-Solid State Materials for Advanced Technology 1-381 (2001) 80-82.
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Multi phonon emission in InAs quantum wells studied with a free electron laser and high pulsed magnetic fields, Journal of Luminescence 94 (2001) 707-711.
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Optically detected intersublevel resonance in InAs/GaAs self-assembled quantum dots, Physica B 1-4272 (1999) 5-7.
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Optically induced deexcitation of rare-earth ions in a semiconductor matrix, Physical Review Letters 2289 (2002)
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Photoconductivity of Be-doped GaAs under intense terahertz radiation, Solid State Communications 3-4122 (2002) 223-228.
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Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures, Applied Physics Letters 880 (2002) 1456-1458.
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