Sputtering yields of Ru, Mo, and Si under low energy Ar+ bombardment

TitleSputtering yields of Ru, Mo, and Si under low energy Ar+ bombardment
Publication TypeJournal Article
Year of Publication2009
AuthorsS.M Wu, R. van de Kruijs, E. Zoethout, F. Bijkerk
JournalJournal of Applied Physics
Date PublishedSep
Type of ArticleArticle
ISBN Number0021-8979
Accession NumberISI:000269850300134
KeywordsDEPENDENCE, Faraday effect, ion beam effects, ion sources, molybdenum, MONATOMIC SOLIDS, ruthenium, silicon, sputtering, THRESHOLD ENERGY, X-ray reflection

Ion sputtering yields for Ru, Mo, and Si under Ar+ ion bombardment in the near-threshold energy range have been studied using an in situ weight-loss method with a Kaufman ion source, Faraday cup, and quartz crystal microbalance. The results are compared to theoretical models. The accuracy of the in situ weight-loss method was verified by thickness-decrease measurements using grazing incidence x-ray reflectometry, and results from both methods are in good agreement. These results provide accurate data sets for theoretical modeling in the near-threshold sputter regime and are of relevance for (optical) surfaces exposed to plasmas, as, for instance, in extreme ultraviolet photolithography.

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Alternate TitleJ. Appl. Phys.

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