Sputtering yields of Ru, Mo, and Si under low energy Ar+ bombardment

TitleSputtering yields of Ru, Mo, and Si under low energy Ar+ bombardment
Publication TypeJournal Article
Year of Publication2009
AuthorsS.M Wu, R. van de Kruijs, E. Zoethout, F. Bijkerk
JournalJournal of Applied Physics
Volume106
Number5
Pagination6
Date PublishedSep
Type of ArticleArticle
ISBN Number0021-8979
Accession NumberISI:000269850300134
KeywordsDEPENDENCE, Faraday effect, ion beam effects, ion sources, molybdenum, MONATOMIC SOLIDS, ruthenium, silicon, sputtering, THRESHOLD ENERGY, X-ray reflection
Abstract

Ion sputtering yields for Ru, Mo, and Si under Ar+ ion bombardment in the near-threshold energy range have been studied using an in situ weight-loss method with a Kaufman ion source, Faraday cup, and quartz crystal microbalance. The results are compared to theoretical models. The accuracy of the in situ weight-loss method was verified by thickness-decrease measurements using grazing incidence x-ray reflectometry, and results from both methods are in good agreement. These results provide accurate data sets for theoretical modeling in the near-threshold sputter regime and are of relevance for (optical) surfaces exposed to plasmas, as, for instance, in extreme ultraviolet photolithography.

URL<Go to ISI>://000269850300134
Division

nSI

PID

f7b032b0fe554719fdaf1b1e92f63c84

Alternate TitleJ. Appl. Phys.

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