Control of the intrinsic microstructure in AP-PECVD synthesised amorphous silica thin films

TitleControl of the intrinsic microstructure in AP-PECVD synthesised amorphous silica thin films
Publication TypeJournal Article
Year of Publication2017
AuthorsF.M Elam, B.CAM van der Velden-Schuermans, S.A Starostin, M.CM van de Sanden, H.W de Vries
JournalRSC Advances
Volume7
Issue82
Pagination52274-52282
Date Published11/2017
Abstract

Amorphous single layered silica films deposited using industrially scalable roll-to-roll atmospheric pressure-plasma enhanced chemical vapor deposition were evaluated in terms of structure-performance relationships. Polarised attenuated total reflectance-Fourier transform infrared absorption spectroscopy and heavy water exposure to induce hydrogen-deuterium exchange revealed it was possible to control the film porosity simply by varying the precursor flux and plasma residence times. Denser silica network structures with fewer hydroxyl impurities, shorter Si-O bonds, decreased Si-O-Si bond angles and a greater magnitude of isolated pores were found in films deposited with decreased precursor flux and increased plasma residence times, and consequently exhibited significantly improved encapsulation performance.

DOI10.1039/C7RA10975J
Division

MaSF

Department

APPFF

PID

36952f981cbbfcc8ac77d98d04769359

Alternate TitleRSC Adv.
LabelOA

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