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M. Forcales, I.V Bradley, J.PR Wells, T. GregorkiewiczTemporal characteristics of the optical storage effect in Si:Er, Solid State Phenomena 82-84 (2002) 623-628.
R.A Lewis, I.V Bradley, M. HeniniPhotoconductivity of Be-doped GaAs under intense terahertz radiation, Solid State Communications 3-4122 (2002) 223-228.
R.A Lewis, W. Xu, P.M Koenraad, I.V BradleyEffect of strong terahertz radiation on magnetoconductivity in two dimensions, Int. J. Mod. Phys. B 20-2216 (2002) 2964-2967.
P. Murzyn, C.R Pidgeon, J.PR Wells, I.V Bradley, Z. Ikonic, R.W Kelsall, P. Harrison, S.A Lynch, D.J Paul, D.D Arnone et al.Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures, Applied Physics Letters 880 (2002) 1456-1458.
H.A Tan, Z.J Xin, H.N Rutt, J.PR Wells, I.V BradleyIntersubband lifetimes and free carrier effects in optically pumped far infrared quantum wells laser structures, Semiconductor Science and Technology 717 (2002) 645-650.
D.G Clarke, C.R Pidgeon, J.PR Wells, I.V Bradley, R. Murray, B.N MurdinDouble resonance study of hole burning in self-assembled quantum dots, Physica B 1-4314 (2002) 474-476.
V.N Shastin, R.K Zhukavin, E.E Orlova, S.G Pavlov, M.H Rummeli, H.W Hubers, J.N Hovenier, T.O Klaassen, H. Riemann, I.V Bradley et al.Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation, Applied Physics Letters 1980 (2002) 3512-3514.
M. Forcales, T. Gregorkiewicz, I.V Bradley, J.PR WellsAfterglow effect in photoluminescence of Si : Er, Physical Review B 1965 (2002) 
M.AJ Klik, T. Gregorkiewicz, I.V Bradley, J.PR WellsOptically induced deexcitation of rare-earth ions in a semiconductor matrix, Physical Review Letters 2289 (2002)