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H.B Profijt, M.CM van de Sanden, W.MM KesselsSubstrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO(2) Thin Films, Electrochem. Solid State Lett. 15 (2012) G1-G3.
G. Dingemans, M.CM van de Sanden, W.MM KesselsPlasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses, Plasma Processes and Polymers 9 (2012) 761-771.
B. Hoex, M.CM van de Sanden, J. Schmidt, R. Brendel, W.MM KesselsSurface passivation of phosphorus-diffused n(+)-type emitters by plasma-assisted atomic-layer deposited Al2O3, Phys. Status Solidi-Rapid Res. Lett. 6 (2012) 4-6.
H.CM Knoops, E. Langereis, M.CM van de Sanden, W.MM KesselsReaction mechanisms of atomic layer deposition of TaN(x) from Ta(NMe(2))(5) precursor and H(2)-based plasmas, J. Vac. Sci. Technol. A 30 (2012) 01A101.
H.CM Knoops, M.E Donders, M.CM van de Sanden, P.HL Notten, W.MM KesselsAtomic layer deposition for nanostructured Li-ion batteries, J. Vac. Sci. Technol. A 30 (2012) 010801.
G. Dingemans, F. Einsele, W. Beyer, M.CM van de Sanden, W.MM KesselsInfluence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface, Journal of Applied Physics 111 (2012) 093713.