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G. Dingemans, N.M Terlinden, D. Pierreux, H.B Profijt, M.CM van de Sanden, W.MM KesselsInfluence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3, Electrochem. Solid State Lett. 14 (2011) H1-H4.
M. Meier, S. Muthmann, A.J Flikweert, G. Dingemans, M.CM van de Sanden, A. GordijnIn-situ transmission measurements as process control for thin-film silicon solar cells, Sol. Energy Mater. Sol. Cells 95 (2011) 3328-3332.
G. Dingemans, M.CM van de Sanden, W.MM KesselsExcellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film, Phys. Status Solidi-Rapid Res. Lett. 5 (2011) 22-24.
G. Dingemans, A. Clark, J.A van Delft, M.CM van de Sanden, W.MM KesselsEr3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100), J. Appl. Phys. 109 (2011) 9.
G. Dingemans, M.M Mandoc, S. Bordihn, M.CM van de Sanden, W.MM KesselsEffective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks, Appl. Phys. Lett. 98 (2011) 222102.
G. Dingemans, N.M Terlinden, M.A Verheijen, M.CM van de Sanden, W.MM KesselsControlling the fixed charge and passivation properties of Si(100)/Al(2)O(3) interfaces using ultrathin SiO(2) interlayers synthesized by atomic layer deposition, J. Appl. Phys. 110 (2011) 6.