Publications
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Continuous Voltage Tunability of Intersubband Relaxation Times in Coupled SiGe Quantum Well Structures Using Ultrafast Spectroscopy, Phys. Rev. Lett. 14102 (2009) 4.
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Silicon as a model ion trap: Time domain measurements of donor Rydberg states, Proc. Natl. Acad. Sci. U. S. A. 31105 (2008) 10649-10653.
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Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments, , New Journal of Physics 9 (2007) 128.
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Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness, Physical Review B 475 (2007)
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Spin relaxation by transient monopolar and bipolar optical orientation, Physical Review Letters 996 (2006)
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Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments, Applied Physics Letters 2189 (2006)
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Excitonic signatures in the photolumineseence and terahertz absorption of a GaAs/AlxGa1-xAs multiple quantum well, Physical Review B 771 (2005)
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Pump-probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy, Semiconductor Science and Technology 1020 (2005) L50-L52.
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Electron spin lifetimes in Hg0.78Cd0.22Te and InSb, Physica E-Low-Dimensional Systems & Nanostructures 3-420 (2004) 220-223.
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Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures, Physical Review B 868 (2003)
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Suppression of D'yakonov-Perel spin relaxation in InAs and InSb by n-type doping at 300 K, Applied Physics Letters 2583 (2003) 5220-5222.
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Electron spin lifetimes in long-wavelength Hg1-xCdxTe and InSb at elevated temperature, Physical Review B 2367 (2003)
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Far-infrared modulated photoluminescence spectroscopy of InSb/GaSb quantum dot structures, Physical Review B 1668 (2003)
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Double resonance study of hole burning in self-assembled quantum dots, Physica B 1-4314 (2002) 474-476.
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Multi phonon emission in InAs quantum wells studied with a free electron laser and high pulsed magnetic fields, Journal of Luminescence 94 (2001) 707-711.
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Direct determination of Shockley-Read-Hall trap density in InSb/InAlSb detectors, Journal of Physics-Condensed Matter 5012 (2000) L731-L734.
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