Publications

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2012
C. Zhao, X. Lu, P. He, P. Zhang, W. Sun, J. Zhang, F. Chen, F. GouCF3+ etching silicon surface: A molecular dynamics study, Vacuum 86 (2012) 913-916.
P.A Premkumar, S.A Starostin, H. de Vries, M. Creatore, P.M Koenraad, W.A MacDonald, M.CM van de SandenSurface Dynamics of SiO2-like Films on Polymers Grown by DBD Assisted CVD at Atmospheric Pressure, Plasma Processes Polym. 11-129 (2012) 1194–1207.
F. Law, B. Hoex, J. Wang, J. Luther, K. Sharma, M. Creatore, M.CM van de SandenKinetic study of solid phase crystallisation of expanding thermal plasma deposited a-Si:H, Thin Solid Films 520 (2012) 5820-5825.
F. Liu, C.J Lee, J.Q Chen, E. Louis, P.JM van der Slot, K.J Boller, F. BijkerkEllipsometry with randomly varying polarization states, Opt. Express 20 (2012) 870-878.
OA 
K. Sharma, M.A Verheijen, M.CM van de Sanden, M. CreatoreIn situ crystallization kinetics studies of plasma-deposited, hydrogenated amorphous silicon layers, J. Appl. Phys. 111 (2012) 6.
I.A Makhotkin, E. Zoethout, E. Louis, A.M Yakunin, S. Mullender, F. BijkerkSpectral properties of La/B - based multilayer mirrors near the boron K absorption edge, Opt. Express 20 (2012) 11778-11786.
OA 
J. Gaudin, O. Peyrusse, J. Chalupsky, M. Toufarova, L. Vysin, V. Hajkova, R. Sobierajski, T. Burian, D S. Farahani, A. Graf et al.Amorphous to crystalline phase transition in carbon induced by intense femtosecond x-ray free-electron laser pulses, Phys. Rev. B 86 (2012) 024103.
2011
M. Saadaoui, H. van Zeijl, W.HA Wien, H.TM Pham, C. Kwakernaak, H.CM Knoops, W.MM Kessels, R. van de Sanden, F.C Voogt, F. Roozeboom et al.Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined with LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating, IEEE Trans. Compon. Pack. Manuf. Technol. 1 (2011) 1728-1738.
R. Sobierajski, S. Bruijn, A.R Khorsand, E. Louis, R de Kruijs, T. Burian, J. Chalupsky, J. Cihelka, A. Gleeson, J. Grzonka et al.Damage mechanisms of MoN/SiN multilayer optics for next-generation pulsed XUV light sources, Opt. Express 119 (2011) 193-205.
OA 
H.B Profijt, P. Kudlacek, M.CM van de Sanden, W.MM KesselsIon and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides, J. Electrochem. Soc. 158 (2011) G88-G91.
J.Q Chen, E. Louis, H. Wormeester, R. Harmsen, R. van de Kruijs, C.J Lee, W. van Schaik, F. BijkerkCarbon-induced extreme ultraviolet reflectance loss characterized using visible-light ellipsometry, Meas. Sci. Technol. 22 (2011) 105705.
G. Dingemans, N.M Terlinden, M.A Verheijen, M.CM van de Sanden, W.MM KesselsControlling the fixed charge and passivation properties of Si(100)/Al(2)O(3) interfaces using ultrathin SiO(2) interlayers synthesized by atomic layer deposition, J. Appl. Phys. 110 (2011) 6.
K. Sharma, A. Branca, A. Illiberi, F.D Tichelaar, M. Creatore, M.CM van de SandenOn the Effect of the Amorphous Silicon Microstructure on the Grain Size of Solid Phase Crystallized Polycrystalline Silicon, Adv. Energy Mater. 1 (2011) 401-406.
G. Dingemans, N.M Terlinden, D. Pierreux, H.B Profijt, M.CM van de Sanden, W.MM KesselsInfluence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3, Electrochem. Solid State Lett. 14 (2011) H1-H4.
P.N He, X.D Lu, C.L Zhao, J.P Ning, Y.M Qing, F.J GouMolecular dynamics simulations of energy effects on atorn F interaction with SiC(100), Acta Phys. Sin. 60 (2011) 095203.
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J.Q Chen, E. Louis, R. Harmsen, T. Tsarfati, H. Wormeester, M. van Kampen, W. van Schaik, R. van de Kruijs, F. BijkerkIn situ ellipsometry study of atomic hydrogen etching of extreme ultraviolet induced carbon layers, Appl. Surf. Sci. 258 (2011) 7-12.

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