Publications

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Author Title Type [ Year(Asc)]
Filters: Author is Goedheer, W. J.  [Clear All Filters]
2016
A. Mohan, R.EI Schropp, I. Poulios, W.J Goedheer, J.K Rath,  Optimizing the parameter space for increased crystallinity of silicon nanoparticles grown in the gas phase, Phys. Status Solidi A - Appl. Mat. 213 (2016) 1826–1830.
K. Landheer, W.J Goedheer, I. Poulios, R.EI Schropp, J.K Rath,  Chemical sputtering by H2+ and H3+ ions during silicon deposition, J. Appl. Phys. 120 (2016) 053304.
K. Landheer, W.J Goedheer, I. Poulios, R.EI Schropp, J.K Rath,  Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH4-H2 discharge in the a-Si:H to μc-Si:H transition regime, Phys. Status Solidi A - Appl. Mat. 213 (2016) 1680–1685.
D.I Astakhov, W.J Goedheer, C.J Lee, V.V Ivanov, V.M Krivtsun, K.N Koshelev, D.V Lopaev, R.M van der Horst, J. Beckers, E.A Osorio et al.,  Exploring the electron density in plasma induced by EUV radiation: II. Numerical studies in argon and hydrogen, J. Phys. D: Appl. Phys. 49 (2016) 295204.
OA 
R.M van der Horst, J. Beckers, E.A Osorio, D.I Astakhov, W.J Goedheer, C.J Lee, V.V Ivanov, V.M Krivtsun, K.N Koshelev, D.V Lopaev et al.,  Exploring the electron density in plasma induced by EUV radiation: I. Experimental study in hydrogen, J. Phys. D: Appl. Phys. 49 (2016) 145203.