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Journal Article
S.G Pavlov, H.W Hubers, P.M Haas, J.N Hovenier, T.O Klaassen, R.K Zhukavin, V.N Shastin, D.A Carder, B. RedlichEvidence of noncascade intracenter electron relaxation in shallow donor centers in silicon, Phys. Rev. B 1678 (2008) 7.
R.K Zhukavin, D.M Gaponova, A.V Muravjov, E.E Orlova, V.N Shastin, S.G Pavlov, H.W Hubers, J.N Hovenier, T.O Klaassen, H. Riemann et al.Laser transitions under resonant optical pumping of donor centres in Si : P, Applied Physics B-Lasers and Optics 576 (2003) 613-616.
S.G Pavlov, U. Bottger, J.N Hovenier, N.V Abrosimov, H. Riemann, R.K Zhukavin, V.N Shastin, B. Redlich, A.FG van der Meer, H.W HubersStimulated terahertz emission due to electronic Raman scattering in silicon, Appl. Phys. Lett. 1794 (2009) 3.
V.N Shastin, R.K Zhukavin, E.E Orlova, S.G Pavlov, M.H Rummeli, H.W Hubers, J.N Hovenier, T.O Klaassen, H. Riemann, I.V Bradley et al.Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation, Applied Physics Letters 1980 (2002) 3512-3514.
S.G Pavlov, H.W Hubers, J.N Hovenier, T.O Klaassen, D.A Carder, P.J Phillips, B. Redlich, H. Riemann, R.K Zhukavin, V.N ShastinStimulated terahertz stokes emission of silicon crystals doped with antimony donors, Physical Review Letters 396 (2006) 
R.K Zhukavin, V.N Shastin, S.G Pavlov, H.-W. Hübers, J.N Hovenier, T.O Klaassen, A.FG van der MeerTerahertz gain on shallow donor transitions in silicon, Journal of Applied Physics 102 (2007) 093104.
S.G Pavlov, U. Bottger, R. Eichholz, N.V Abrosimov, H. Riemann, V.N Shastin, B. Redlich, H.W HubersTerahertz lasing from silicon by infrared Raman scattering on bismuth centers, Appl. Phys. Lett. 2095 (2009) 3.
S.G Pavlov, H.W Hubers, U. Bottger, R.K Zhukavin, V.N Shastin, J.N Hovenier, B. Redlich, N.V Abrosimov, H. RiemannTerahertz Raman laser based on silicon doped with phosphorus, Appl. Phys. Lett. 992 (2008) 3.