DIFFER

M. P. Halsall

First name
M.
Middle name
P.
Last name
Halsall
Sherliker, B., Halsall, M. P., Harrison, P., Jovanovic, V. D., Indjin, D., Ikonic, Z., … Carder, D. (2005). Normal incidence mid-infrared photocurrent in AlGaN/GaN quantum well infrared photodetectors. Acta Physica Polonica A, 107, 174-178. Retrieved from <Go to ISI>://000227308200024 (Original work published 2025)
Halsall, M. P., Zheng, W. M., Harrison, P., Wells, J. P. R., Steer, M. J., & Orlova, E. E. (2004). Binding energy and dynamics of Be acceptor levels in AlAs/GaAs multiple quantum wells. Journal of Luminescence, 108, 181-184. Retrieved from <Go to ISI>://000221572000036 (Original work published 2025)
Halsall, M. P., Dunbar, A. D. F., Shiraki, Y., Miura, M., & Wells, J. P. R. (2004). Hole confinement and dynamics in delta-doped Ge quantum dots. Journal of Luminescence, 108, 329-332. Retrieved from <Go to ISI>://000221572000066 (Original work published 2025)
Zheng, W. M., Halsall, M. P., Harrison, P., Wells, J. P. R., Bradley, I. V., & Steer, M. J. (2003). Effect of quantum-well confinement on acceptor state lifetime in delta-doped GaAs/AlAs multiple quantum wells. Applied Physics Letters, 83, 3719-3721. Retrieved from <Go to ISI>://000186256300025 (Original work published 2025)
Zheng, W. M., Halsall, M. P., Harrison, P., Wells, J. P. R., Bradley, I. V., & Steer, M. J. (2003). Picosecond time-resolved studies of excited state lifetime of Be acceptor in GaAs/AlAs multiple quantum wells. Physica Status Solidi B-Basic Research, 235, 54-57. Retrieved from <Go to ISI>://000180751400010 (Original work published 2025)
Harrison, P., Halsall, M. P., & Zheng, W. M. (2002). Quantum-confined impurities as single-electron quantum dots: Application in Tereherz emitters. In Ultrafast Phenomena in Semiconductors 2001 (Vol. 384-3, pp. 165-172). Retrieved from <Go to ISI>://000174536100030