C. R. Pidgeon

Pidgeon, C. R., Phillips, P. J., Carder, D. ., Murdin, B. N., Fromherz, T. ., Paul, D. J., … Zhao, M. . (2005). Pump-probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy. Semiconductor Science and Technology, 20, L50-L52. Retrieved from <Go to ISI>://000232992800002 (Original work published 2024)

Galbraith, I. ., Chari, R. ., Pellegrini, S. ., Phillips, P. J., Dent, C. J., van der Meer, A. F. G., … Strasser, G. . (2005). Excitonic signatures in the photolumineseence and terahertz absorption of a GaAs/AlxGa1-xAs multiple quantum well. Physical Review B, 71. Retrieved from <Go to ISI>://000228013600007 (Original work published 2024)

Murzyn, P. ., Pidgeon, C. R., Phillips, P. J., Wells, J. P., Gordon, N. T., Ashley, T. ., … Maxey, C. D. (2004). Electron spin lifetimes in Hg0.78Cd0.22Te and InSb. Physica E-Low-Dimensional Systems & Nanostructures, 20, 220-223. Retrieved from <Go to ISI>://000188555200007 (Original work published 2024)

Ashley, T. ., Burke, T. M., Pryce, G. J., Adams, A. R., Andreev, A. ., Murdin, B. N., … Pidgeon, C. R. (2003). InSb1-xNx growth and devices. Solid-State Electronics, 47, 387-394. Retrieved from <Go to ISI>://000180759200002 (Original work published 2024)

Murzyn, P. ., Pidgeon, C. R., Phillips, P. J., Wells, J. P., Gordon, N. T., Ashley, T. ., … Maxey, C. D. (2003). Electron spin lifetimes in long-wavelength Hg1-xCdxTe and InSb at elevated temperature. Physical Review B, 67. Retrieved from <Go to ISI>://000184040700031 (Original work published 2024)

Pidgeon, C. R., Murzyn, P. ., Wells, J. P. R., Konic, Z. ., Kelsall, R. W., Harrison, P. ., … Robbins, D. J. (2003). THz intersubband dynamics in p-Si/SiGe quantum well emitter structures. Physica Status Solidi B-Basic Research, 237, 381-385. Retrieved from <Go to ISI>://000182801800037 (Original work published 2024)

Murzyn, P. ., Pidgeon, C. R., Phillips, P. J., Merrick, M. ., Litvinenko, K. L., Allam, J. ., … Cohen, L. F. (2003). Suppression of D’yakonov-Perel spin relaxation in InAs and InSb by n-type doping at 300 K. Applied Physics Letters, 83, 5220-5222. Retrieved from <Go to ISI>://000187341800034 (Original work published 2024)

Ganichev, S. D., Schneider, P. ., Bel’kov, V. V., Ivchenko, E. L., Tarasenko, S. A., Wegscheider, W. ., … Prettl, W. . (2003). Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures. Physical Review B, 68. Retrieved from <Go to ISI>://000185287500007 (Original work published 2024)

Paul, D. J., Lynch, S. A., Bates, R. ., Ikonic, Z. ., Kelsall, R. W., Harrison, P. ., … Bradley, I. V. (2003). Si/SiGe quantum-cascade emitters for terahertz applications. Physica E-Low-Dimensional Systems & Nanostructures, 16, 147-155. Retrieved from <Go to ISI>://000180775500022 (Original work published 2024)

Pidgeon, C. R., Murzyn, P. ., Wells, J. P. R., Bradley, L. ., Ikonic, Z. ., Kelsall, R. W., … Cullis, A. G. (2002). THz intersubband dynamics in p-Si/SiGe quantum well structures. Physica E-Low-Dimensional Systems & Nanostructures, 13, 904-907. Retrieved from <Go to ISI>://000176869100188 (Original work published 2024)