DIFFER

C. M. Ciesla

First name
C.
Middle name
M.
Last name
Ciesla
Murdin, B. N., Hollingworth, A. R., Kamal-Saadi, M., Kotitschke, R. T., Ciesla, C. M., Pidgeon, C. R., … Gornik, E. (1999). Suppression of LO phonon scattering in Landau quantized quantum dots. Physical Review B, 59, R7817-R7820. https://doi.org/10.1103/PhysRevB.59.R7817 (Original work published)
Langerak, C., Murdin, B. N., Ciesla, C. M., Oswald, J., Homer, A., Springholz, G., … Pidgeon, C. R. (1998). Landau-level lifetimes in PbTe nipi superlattices, PbTe/PbEuTe and InAs/AlSb quantum wells. Physica E, 2, 121-125. https://doi.org/10.1016/s1386-9477(98)00027-7 (Original work published 2025)
Ciesla, C. M., Murdin, B. N., Phillips, T. J., White, A. M., Beattie, A. R., Langerak, C., … Sivananthan, S. (1997). Auger recombination dynamics of Hg0.795Cd0.205Te in the high excitation regime. Applied Physics Letters, 71, 491-493. https://doi.org/10.1063/1.119588 (Original work published)
Murdin, B. N., KamalSaadi, M., Ciesla, C. M., Pidgeon, C. R., Langerak, C., Stradling, R. A., & Gornik, E. (1997). Landau level lifetimes in an InAs/AlSb quantum well determined by a picosecond far-infrared pump-probe technique. Physica Status Solidi B-Basic Research, 204, 155-158. (Original work published 2025)
Ciesla, C. M., Murdin, B. N., Phillips, T. J., White, A. M., Beattie, A. R., Langerak, C., … Pidgeon, C. R. (1997). Auger recombination dynamics in highly excited HgCdTe. Physica Status Solidi B-Basic Research, 204, 121-124. (Original work published 2025)
Ciesla, C. M., Murdin, B. N., Pidgeon, C. R., Stradling, R. A., Phillips, C. C., Livingstone, M., … Pullin, M. J. (1996). Suppression of auger recombination in arsenic-rich InAs1-xSbx strained layer superlattices. Journal of Applied Physics, 80, 2994-2997. https://doi.org/10.1063/1.363157 (Original work published)
Murdin, B. N., Pidgeon, C. R., Jaroszynski, D. A., Phillips, C. C., Stradling, R. A., Ciesla, C. M., … Reno, J. L. (1995). Picosecond Free Electron Laser Studies Recombination in Insb and Inassb Systems. In Narrow Gap Semiconductors 1995 (pp. 267-271).