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Second-harmonic generation involving valence-subband transitions in p-doped GaAs/AlxGa1-xAs quantum wells

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Abstract

We present second-harmonic generation experiments in p-doped asymmetrically stepped quantum wells using the emission of a free-electron laser in the wavelength interval between 13 and 18 mu m. The wells are designed such that the three fewest valence-subbands are about equally spaced. We measured the angular and frequency dependence of the second-harmonic signal excited by intense laser irradiation chosen to be nearly resonant with the transitions between the three lowest valence subbands. We see evidence of the optical second-order susceptibility components chi(xxz)((2)), chi(zxx)((2)) and chi(zxy)((2)), chi(xyz)((2)) in the quantum wells and determine their enhancement with respect to chi(xyz)((2)) of bulk GaAs.

Year of Publication
1997
Journal
Physical Review B
Volume
56
Number
16
Number of Pages
10428-10434
Date Published
Oct 15
ISBN Number
0163-1829
DOI
PId
eb8e5f4fe7084a250885c6385b24d93d
Journal Article
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