Skip to main content
DIFFER main navigation
About DIFFER
Organization
Strategy
Virtual tour
Annual reports
Logo
People
Sharing knowledge
Repository
News & Events
Events
News
Newsletter
In the Media
Research
Fusion Energy
Energy Systems & Control
Integrated Modelling
Plasma Edge Physics and Diagnostics
Plasma Material Interactions
Plasma Micro-Turbulence
Radiation Induced Defect Research
Chemical Energy
Autonomous Energy Materials Discovery
Catalytic and Electrochemical Processes for Energy Applications
Electrochemical Materials and Interfaces
Plasma Solar Fuels Devices
Facilities
Facilities & Instrumentation
Engineering Support
Ion Beam Facility
Magnum-PSI
Upgraded Pilot-PSI (UPP)
Network
Joint programs
Working at
Expats
Internships
Vacancies
Contact
Search
DIFFER main navigation (mobile)
About DIFFER
Organization
Strategy
Virtual tour
Annual reports
Logo
People
Sharing knowledge
Repository
News & Events
Events
News
Newsletter
In the Media
Research
Fusion Energy
Chemical Energy
Facilities
Facilities & Instrumentation
Network
Joint programs
Working at
Expats
Internships
Vacancies
Contact
Search
DIFFER
DIFFER Publication
Terahertz gain on shallow donor transitions in silicon
Label
Value
Author
R. K. Zhukavin
V. N. Shastin
S. G. Pavlov
H.-W. Hübers
J. N. Hovenier
T. O. Klaassen
A. F. G. van der Meer
Year of Publication
2007
Journal
Journal of Applied Physics
Volume
102
Number of Pages
093104
PId
a0529b3c04b149ebf029c7b9e1b943d5
Journal Article
Download citation
BibTeX
EndNote X3 XML