Far infrared modulated photoluminescence in InSb quantum dots

TitleFar infrared modulated photoluminescence in InSb quantum dots
Publication TypeJournal Article
Year of Publication2004
AuthorsR.A Child, R.J Nicholas, N.J Mason, P. Shields, J.PR Wells, I.V Bradley, J. Phillips, B.N Murdin
JournalPhysica E-Low-Dimensional Systems & Nanostructures
Volume22
Number1-3
Pagination598-602
Date PublishedApr
Type of ArticleArticle
ISBN Number1386-9477
Accession NumberISI:000221140800145
KeywordsFIRM-PL, GaSb, InSb, quantum dots, SPECTROSCOPY
Abstract

The first FIRM-PL measurements in InSb/GaSb quantum dots have been performed. At low power densities the FIR absorption causes a transfer of carriers between dots and effectively cools the system, preferentially populating large, low energy dots and increasing the photoluminescence (PL) intensity, At higher powers the carrier temperature increases and the PL intensity falls. The spectral dependence of the FIRM-PL signal measures the energy spectrum of the quantum dots, showing a peak at 14.5 meV corresponding to transitions between the first two energy levels of the quantum dot distribution. (C) 2003 Elsevier B.V. All rights reserved.

URL<Go to ISI>://000221140800145
Division

GUTHz

Department

FELIX

PID

afb9e18fe2baffe6f4b1db17215fac13

Alternate TitlePhysica E

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