Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness

TitleInterwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness
Publication TypeJournal Article
Year of Publication2007
AuthorsM. Califano, N.Q Vinh, P.J Phillips, Z. Ikonic, R.W Kelsall, P. Harrison, C.R Pidgeon, B.N Murdin, D.J Paul, P. Townsend, J. Zhang, I.M Ross, A.G Cullis
JournalPhysical Review B
Volume75
Number4
Date PublishedJan
ISBN Number1098-0121
Accession NumberISI:000243895600100
URL<Go to ISI>://000243895600100
Division

GUTHz

Department

FELIX

PID

3d6563e23717aefaec933dc4643ec279

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