Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments,

TitleDirect determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments,
Publication TypeJournal Article
Year of Publication2007
AuthorsP. Rauter, T. Fromherz, N.Q Vinh, B.N Murdin, J.P Phillips, C.R Pidgeon, L. Diehl, G. Dehlinger, D Grützmacher, M. Zhao, W-X Ni,
JournalNew Journal of Physics
Volume9
Pagination128
Division

GUTHz

Department

FELIX

PID

82107e7779e36f796bd56d40c877bc61

Go back one page.